| Part number | BD651 |
|---|---|
| Datasheet | BD651-INCHANGE.pdf |
| File Size | 190.35 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BD651 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BD651 | NPN SILICON POWER DARLINGTONS | Bourns Electronic Solutions |
 |
BD651 | SILICON POWER TRANSISTOR | SavantIC |
 |
BD651 | SILICON DARLINGTON POWER TRANSISTORS | Comset Semiconductors |
 |
BD6510F | High-Side Switch | Rohm |
|
BD6512F | High-Side Switch | Rohm |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BD651F | NPN Transistor |
| BD650 | PNP Transistor |
| BD650F | PNP Transistor |
| BD652 | PNP Transistor |
| BD652F | PNP Transistor |
| BD609 | NPN Transistor |
| BD633 | Silicon NPN Power Transistor |
| BD636 | Silicon PNP Power Transistor |
| BD643 | NPN Transistor |
| BD643F | NPN Transistor |
