Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) - High DC Current Gain : hFE= 750(Min) @IC= 3A - Low Saturation Voltage - plement to Type BD652 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part Number | Manufacturer | Description |
|---|---|---|
| BD651 | Bourns | NPN SILICON POWER DARLINGTONS |
| BD651 | SavantIC | SILICON POWER TRANSISTOR |
| BD6510F | ROHM | High-Side Switch |
| BD6512F | ROHM | High-Side Switch |
| BD651 | Comset Semiconductors | SILICON DARLINGTON POWER TRANSISTORS |
| BD6513F | ROHM | High-Side Switch |
| BD6516F | ROHM | High-Side Switch |
| BD6517F | ROHM | High-Side Switch |
| BD6519FJ | ROHM | High-Side Switch |
| BD650 | Bourns | PNP SILICON POWER DARLINGTONS |
