| Part number | BD651F |
|---|---|
| Datasheet | BD651F-INCHANGE.pdf |
| File Size | 209.73 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD651F TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 140 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A;.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BD651 | NPN SILICON POWER DARLINGTONS | Bourns Electronic Solutions |
 |
BD651 | SILICON POWER TRANSISTOR | SavantIC |
 |
BD651 | SILICON DARLINGTON POWER TRANSISTORS | Comset Semiconductors |
