Datasheet Details
| Part number | BD702 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.58 KB |
| Description | PNP Transistor |
| Datasheet |
 BD702 Datasheet
|
|
|
| Part number | BD702 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.58 KB |
| Description | PNP Transistor |
| Datasheet |
BD702 Datasheet
|
|
|
|
·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -100V(Min.) ·DC Current Gain— : hFE = 750(Min) @ IC= -3A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for output devices in complementary general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -100 VCEO Collector-Emitter Voltage -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 IB Base Current -0.1 PC Collector Power Dissipation TC=25℃ 70 Ti Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.79 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BD702 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A ,IB= -12mA VBE(on) Base-Emitter On Voltage ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain IC= -3A;
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor.
| Part Number | Description |
|---|---|
| BD705 | NPN Transistor |
| BD706 | PNP Transistor |
| BD707 | NPN Transistor |
| BD708 | PNP Transistor |
| BD709 | NPN Transistor |
| BD710 | PNP Transistor |
| BD711 | NPN Transistor |
| BD712 | PNP Transistor |
| BD719 | NPN Transistor |
| BD720 | PNP Transistor |