Datasheet Details
| Part number | BD798 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.21 KB |
| Description | PNP Transistor |
| Download | BD798 Download (PDF) |
|
|
Overview: isc Silicon PNP Power Transistor.
| Part number | BD798 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.21 KB |
| Description | PNP Transistor |
| Download | BD798 Download (PDF) |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) ·Low Saturation Voltage ·Complement to Type BD797 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current-Continuous PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -3 A 65 W 150 ℃ Tstg Storage Ttemperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.92 ℃/W BD798 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD798 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA;
| Part Number | Description |
|---|---|
| BD797 | NPN Transistor |
| BD702 | PNP Transistor |
| BD705 | NPN Transistor |
| BD706 | PNP Transistor |
| BD707 | NPN Transistor |
| BD708 | PNP Transistor |
| BD709 | NPN Transistor |
| BD710 | PNP Transistor |
| BD711 | NPN Transistor |
| BD712 | PNP Transistor |