Datasheet Details
| Part number | BD801 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.13 KB |
| Description | NPN Transistor |
| Download | BD801 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BD801 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.13 KB |
| Description | NPN Transistor |
| Download | BD801 Download (PDF) |
|
|
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Saturation Voltage ·Complement to Type BD802 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IB Base Current-Continuous PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 3 A 65 W 150 ℃ Tstg Storage Ttemperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.92 ℃/W BD801 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD801 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BD801 | Plastic High Power Silicon NPN Transistor | Motorola Inc |
| Part Number | Description |
|---|---|
| BD800 | PNP Transistor |
| BD802 | PNP Transistor |
| BD807 | NPN Transistor |
| BD808 | PNP Transistor |
| BD809 | NPN Transistor |
| BD810 | PNP Transistor |
| BD825 | NPN Transistor |
| BD826 | PNP Transistor |
| BD827 | NPN Transistor |
| BD828 | PNP Transistor |