900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

BD825 Datasheet Preview

BD825 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD825
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 45V(Min)
·High DC Current Gain
·Low Saturation Voltage
·Complement to Type BD826
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for driver-stages in hi-fi amplifiers and
television circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
45
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.0
A
ICP
Collector Current-Peak
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
1.5
A
2
W
10
150
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-65~150
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
12.5 /W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BD825 Datasheet Preview

BD825 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD825
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 0.5A ; VCE= 2V
ICBO
Collector Cutoff Current
VCB= 30V; IE= 0
VCB= 30V; IE= 0; TC= 125
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 5mA ; VCE= 2V
hFE-2
DC Current Gain
IC= 150mA ; VCE= 2V
hFE-3
DC Current Gain
IC= 500mA ; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 50mA ; VCE= 5V
MIN TYP. MAX UNIT
45
V
0.5
V
1.0
V
0.1
uA
10
10
uA
25
40
250
25
250
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number BD825
Description NPN Transistor
Maker INCHANGE
PDF Download

BD825 Datasheet PDF






Similar Datasheet

1 BD82000FVJ 1.5A Current Limit High-Side Switch
Rohm
2 BD82001FVJ 1.5A Current Limit High-Side Switch
Rohm
3 BD82004FVJ-M 1.5A Current Limit High-Side Switch
Rohm
4 BD82005FVJ-M 1.5A Current Limit High-Side Switch
Rohm
5 BD82006FVJ-M 2.4A Current Limit High-Side Switch
Rohm
6 BD82007FVJ-M 2.4A Current Limit High-Side Switch
Rohm
7 BD8200CS (BD840CS - BD8200CS) DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
Pan Jit International
8 BD8200CT THROUGH HOLE MOUNT SCHOTTKY BARRIER RECTIFIERS
Pan Jit International
9 BD8200S DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
Pan Jit International





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy