Datasheet Summary
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 45V(Min)
- High DC Current Gain
- Low Saturation Voltage
- plement to Type BD826
- Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
- Designed for driver-stages in hi-fi amplifiers and television circuits....
