Datasheet4U Logo Datasheet4U.com

BD825 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) High DC Current Gain Low Saturation Voltage Complement to Type BD826 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver-stages in hi-fi amplifiers

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BD825 NPN power transistors NXP
BD825 Silicon NPN Transistor Valvo
BD8253EFV-M 6ch System Motor Driver ROHM
BD8255MUV-M 6ch System Motor Driver Rohm
BD8256EFV-M 9ch System Motor Driver ROHM

Other Datasheets by Inchange Semiconductor

Part Number Description
BD826 PNP Transistor
BD827 NPN Transistor
BD828 PNP Transistor
BD829 NPN Transistor
BD800 PNP Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor INCHANGE Semiconductor BD825 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD826 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver-stages in hi-fi amplifiers and television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.0 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.
Published: |