DC Current Gain -
: hFE = 40@ IC= 0.5A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min)
Complement to Type BD908
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in general purpose power amplifier an
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BD907. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40@ IC= 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·Complement to Type BD90...
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ter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·Complement to Type BD908 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.
BD907 Datasheet
