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INCHANGE

BD940 Datasheet Preview

BD940 Datasheet

Silicon PNP Power Transistor

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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD934/936/938/940/942
DESCRIPTION
·DC Current Gain-
: hFE= 40(Min)@ IC= -150mA
·Complement to Type BD933/935/937/939/941
APPLICATIONS
·Designed for use in output stages of audio and television
amplifier circuits where high peak powers can occur.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
BD934
-45
BD936
-60
VCBO
Collector-Base Voltage BD938
-100
BD940
-120
BD942
-140
BD934
-45
BD936
-60
VCEO
Collector-Emitter Voltage BD938
-80
BD940
-100
BD942
-120
VEBO
IC
Emitter-Base Voltage
Collector Current-Continuous
-5
-3
ICM Collector Current-Peak
-7
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
-0.5
30
150
Tstg Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
4.17 /W
Thermal Resistance,Junction to Ambient 70 /W
isc websitewww.iscsemi.cn
1




INCHANGE

BD940 Datasheet Preview

BD940 Datasheet

Silicon PNP Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD934/936/938/940/942
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD934
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BD936
BD938 IC= -100mA ; IB= 0
BD940
BD942
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A
VBE(on) Base-Emitter On Voltage
ICBO Collector Cutoff Current
ICEO Collector Cutoff Current
IC= -1A; VCE= -2V
VCB= VCBOmax; IE= 0
VCB= VCBOmax; IE= 0,TJ=150
VCE= VCEOmax; IB= 0
IEBO Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
hFE-2
DC Current Gain
DC Current Gain
IC= -150mA ; VCE= -2V
IC= -1A ; VCE= -2V
fT Current-Gain—Bandwidth Product IC= -250mA ; VCE= -10V
Switching Times
ton Turn-On Time
toff Turn-Off Time
IC= -1.0A; IB1= -IB2= -0.1A
MIN TYP. MAX UNIT
-45
-60
-80 V
-100
-120
-0.6 V
-1.3 V
-0.05
-1
mA
-0.1 mA
-0.2 mA
40 250
25
3 MHz
0.2 0.6 μs
0.7 2.4 μs
isc websitewww.iscsemi.cn
2


Part Number BD940
Description Silicon PNP Power Transistor
Maker INCHANGE
Total Page 2 Pages
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