| Part number | BDV65 |
|---|---|
| Datasheet | BDV65-INCHANGE.pdf |
| File Size | 215.50 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector Current -IC= 12A ·Collector-Emitter Saturation Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c ,Junction to Case Rth j-a ,Junction to Ambient MAX UNIT 1.0 ℃/W 35.7 ℃/W TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDV65 V(BR)CEO Collector-Emitter Breakdown Voltage BDV65A BDV65B IC= 30mA; IB= 0...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BDV65 | NPN Transistor | Power Innovations Limited |
 |
BDV65 | SILICON POWER TRANSISTOR | SavantIC |
 |
BDV65 | NPN SILICON POWER DARLINGTONS | Comset Semiconductors |
 |
BDV65 | Silicon NPN Transistors | NTE |
|
BDV65A | NPN Transistor | Power Innovations Limited |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BDV65A | NPN Transistor |
| BDV65B | NPN Transistor |
| BDV65C | NPN Transistor |
| BDV64 | PNP Transistor |
| BDV64A | PNP Transistor |
| BDV64B | PNP Transistor |
| BDV64C | PNP Transistor |
| BDV67 | NPN Transistor |
| BDV67A | NPN Transistor |
| BDV67B | NPN Transistor |
