900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

BDV65 Datasheet Preview

BDV65 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Darlington Power Transistor
DESCRIPTION
·Collector Current -IC= 12A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max.)@ IC= 5A
·Complement to Type BDV64/A/B/C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
BDV65
60
VCBO
Collector-Base
Voltage
BDV65A
80
V
BDV65B
100
BDV65C
120
BDV65
60
VCEO
Collector-Emitter
Voltage
BDV65A
80
V
BDV65B
100
BDV65C
120
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25
Collector Power Dissipation
@ Ta=25
TJ
Junction Temperature
0.5
A
125
W
3.5
150
Tstg
Storage Temperature Range
-65~150
BDV65/A/B/C
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BDV65 Datasheet Preview

BDV65 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Darlington Power Transistor
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
MAX UNIT
1.0 /W
35.7 /W
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDV65
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDV65A
BDV65B
IC= 30mA; IB= 0
BDV65C
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 20mA
VBE(on) Base-Emitter On Voltage
ICEO
Collector Cutoff Current
IC= 5A; VCE= 4V
VCE= 1/2VCEOmax; IB= 0
BDV65
VCB= 40V; IE= 0;TJ= 150
BDV65A VCB= 50V; IE= 0;TJ= 150
ICBO
Collector Cutoff Current
BDV65B VCB= 60V; IE= 0;TJ= 150
BDV65C VCB= 70V; IE= 0;TJ= 150
ICBO
Collector Cutoff Current
VCB= VCBOmax; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 5A; VCE= 4V
BDV65/A/B/C
MIN TYP. MAX UNIT
60
80
V
100
120
2.0
V
2.5
V
2.0 mA
2.0 mA
1000
0.4 mA
5
mA
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BDV65
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
PDF Download

BDV65 Datasheet PDF





Similar Datasheet

1 BDV64 PNP Transistor
Power Innovations Limited
2 BDV64 SILICON POWER TRANSISTOR
SavantIC
3 BDV64 Silicon PNP Darlington Power Transistor
Comset Semiconductors
4 BDV64 PNP Transistor
INCHANGE
5 BDV64A PNP Transistor
Power Innovations Limited
6 BDV64A SILICON POWER TRANSISTOR
SavantIC
7 BDV64A Silicon PNP Darlington Power Transistor
Comset Semiconductors
8 BDV64A PNP Transistor
INCHANGE
9 BDV64B PNP Transistor
Motorola Inc





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy