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BDV65 - Silicon NPN Transistors

This page provides the datasheet information for the BDV65, a member of the BDV64 Silicon NPN Transistors family.

Datasheet Summary

Description

The BDV64 (PNP) and BDV65 (NPN) are silicon Darlington complementary power transistors in a TO

3PN type package designed for general purpose amplifier and low speed switching applications.

Features

  • D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 60V Min D Collector.
  • Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 5A D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistor Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 60V Collector.
  • Base Voltage, VCB.

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Datasheet preview – BDV65

Datasheet Details

Part number BDV65
Manufacturer NTE
File Size 61.95 KB
Description Silicon NPN Transistors
Datasheet download datasheet BDV65 Datasheet
Additional preview pages of the BDV65 datasheet.

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Other Datasheets by NTE
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Full PDF Text Transcription

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BDV64 (PNP) & BDV65 (NPN) Silicon Complementary Transistors Darlington Power Amp, Switch TO−3PN Type Package Description: The BDV64 (PNP) and BDV65 (NPN) are silicon Darlington complementary power transistors in a TO−3PN type package designed for general purpose amplifier and low speed switching applications. Features: D Collector−Emitter Sustaining Voltage: VCEO(sus) = 60V Min D Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 5A D Monolithic Construction with Built−In Base−Emitter Shunt Resistor Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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