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BDV65 - NPN Transistor

General Description

Collector Current -IC= 12A Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 5A Complement to Type BDV64/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplif

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 12A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.