| Part Number | BDV65 Datasheet |
|---|---|
| Manufacturer | SavantIC |
| Overview | ·With TO-3PN package ·Complement to type BDV64/64A/64B/64C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications. PINNING PIN 1 2 3 Base. therwise specified PARAMETER BDV65 Collector-emitter breakdown voltage BDV65A IC=30mA, IB=0 BDV65B BDV65C VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BDV65 Collector cut-off current BDV65A BDV65B BDV65C BDV65 Collector cut-off current BDV65A BDV65B BDV65C IEBO hFE VEC Emi. |
BDV65 Datasheet and Specifications PDF
The BDV65 is a SILICON POWER TRANSISTOR.
| Part Number | BDV65 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Power Innovations Limited |
| Overview | BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK JUNE 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BDV64, BDV64A, BDV64B. seconds NOTES: 1. This value applies for tp ≤ 0.1 ms, duty cycle ≤ 10% 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. V EBO IC ICM IB Ptot Ptot Tj Tstg TL VCEO VCBO SYMBOL VALUE 60 80 100 120 60 80 100 . |
| Part Number | BDV65 Datasheet |
|---|---|
| Description | NPN SILICON POWER DARLINGTONS |
| Manufacturer | Comset Semiconductors |
| Overview | BDV65-A-B-C NNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching appli. pation Tmb = 25° C 125 Watts 3.5 TJ Junction Temperature 150 °C -65 to +150 TS Storage Temperature THERMAL CHARACTERISTICS Symbol Ratings BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C Value Unit Rthj-c Thermal Resistance, Junction to Case 1 °C / W 35.7 Rthj-a . |
| Part Number | BDV65 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector Current -IC= 12A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 5A ·Complement to Type BDV64/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and relia. k isc Silicon NPN Darlington Power Transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX UNIT 1.0 ℃/W 35.7 ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITI. |