BDV65C Description
·plement to type BDV64/64A/64B/64C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications. BDV65/65A/65B/65C SYMBOL MIN 60 80 TYP. VCE=4V IE=10A 1000 3.5 5 mA mA V THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER junction to case MAX 1.0 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE.