BDV65B Description
BDV65B (NPN), BDV64B (PNP) plementary Silicon Plastic Power Darlingtons . for use as output devices in plementary general purpose amplifier applications.
BDV65B Key Features
- High DC Current Gain
- HFE = 1000 (min) @ 5 Adc
- Monolithic Construction with Built-in Base Emitter Shunt Resistors
- These are Pb-Free Devices
- Continuous
- Peak Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Rang
- For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering
- Rev. 14