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BDV65B (NPN), BDV64B (PNP)
Complementary Silicon Plastic Power Darlingtons
. . . for use as output devices in complementary general purpose amplifier applications.
Features
• High DC Current Gain − HFE = 1000 (min) @ 5 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistors • These are Pb−Free Devices*
MAXIMUM RATINGS Rating
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous
− Peak Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
Symbol VCEO VCB VEB IC
IB PD
TJ, Tstg
Max 100 100 5.0 10 20 0.5 125 1.0 -65 to + 150
Unit Vdc Vdc Vdc Adc
Adc W W/°C °C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Case
RqJC
1.
BDV65B Datasheet
