BDV65B datasheet by Inchange Semiconductor.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BDV65B |
|---|---|
| Datasheet | BDV65B BDV65 Datasheet (PDF) |
| File Size | 215.50 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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·Collector Current -IC= 12A ·Collector-Emitter Saturation Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c ,Junction to Case Rth j-a ,Junction to Ambient MAX UNIT 1.0 ℃/W 35.7 ℃/W TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDV65 V(BR)CEO Collector-Emitter Breakdown Voltage BDV65A BDV65B IC= 30mA; IB= 0...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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BDV65B | NPN Transistor | Motorola Inc |
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BDV65B | NPN Transistor | ON Semiconductor |
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BDV65B | NPN Transistor | Power Innovations Limited |
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BDV65B | SILICON POWER TRANSISTOR | SavantIC |
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BDV65B | NPN SILICON POWER DARLINGTONS | Comset Semiconductors |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BDV65 | NPN Transistor |
| BDV65A | NPN Transistor |
| BDV65C | NPN Transistor |
| BDV64 | PNP Transistor |
| BDV64A | PNP Transistor |
| BDV64B | PNP Transistor |
| BDV64C | PNP Transistor |
| BDV67 | NPN Transistor |
| BDV67A | NPN Transistor |
| BDV67B | NPN Transistor |
