| Part Number | BDV65B Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
BDV65B (NPN), BDV64B (PNP)
Complementary Silicon Plastic Power Darlingtons
. . . for use as output devices in complementary general purpose amplifier applications.
Features
• High DC Current Gain − H.
* High DC Current Gain * HFE = 1000 (min) @ 5 Adc * Monolithic Construction with Built *in Base Emitter Shunt Resistors * These are Pb *Free Devices* MAXIMUM RATINGS Rating Collector *Emitter Voltage Collector *Base Voltage Emitter *Base Voltage Collector Current * Continuous * Peak Base Current Total D. |
BDV65B Datasheet and Specifications PDF
The BDV65B is a NPN Transistor.
| Part Number | BDV65B Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BDV65B/D
Complementary Silicon Plastic Power Darlingtons
BDV65B PNP BDV64B
DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTO.
nolithic Construction with Built *in Base Emitter Shunt Resistors MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB Value 100 100 5.0 10 20 Unit Vdc Vdc Vdc Adc Adc Collector *Emitter Voltage Collector *Base Voltage Emitter *Base Voltage Collector Current * Continuous * Peak Base Current 0.5 Total Device. |
| Part Number | BDV65B Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Power Innovations Limited |
| Overview | BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK JUNE 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BDV64, BDV64A, BDV64B. seconds NOTES: 1. This value applies for tp ≤ 0.1 ms, duty cycle ≤ 10% 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. V EBO IC ICM IB Ptot Ptot Tj Tstg TL VCEO VCBO SYMBOL VALUE 60 80 100 120 60 80 100 . |
| Part Number | BDV65B Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3PN package ·Complement to type BDV64/64A/64B/64C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications. PINNING PIN 1 2 3 Base. therwise specified PARAMETER BDV65 Collector-emitter breakdown voltage BDV65A IC=30mA, IB=0 BDV65B BDV65C VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BDV65 Collector cut-off current BDV65A BDV65B BDV65C BDV65 Collector cut-off current BDV65A BDV65B BDV65C IEBO hFE VEC Emi. |