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BDV65B - NPN Transistor

Download the BDV65B datasheet PDF. This datasheet also covers the BDV65 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Collector Current -IC= 12A Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 5A Complement to Type BDV64/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplif

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Note: The manufacturer provides a single datasheet file (BDV65-INCHANGE.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 12A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.