BDV65B Overview
·Collector Current -IC= 12A ·Collector-Emitter Saturation Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c ,Junction to Case Rth j-a ,Junction to Ambient MAX UNIT 1.0 ℃/W 35.7 ℃/W TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDV65 V(BR)CEO Collector-Emitter Breakdown Voltage BDV65A BDV65B IC= 30mA; IB= 0...
