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BDW56 - PNP Transistor

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General Description

·Collector–Emitter Sustaining Voltage- : VCEO(SUS)= -45V- BDW56 = -60V- BDW58 = -80V- BDW60 ·Complement to Type BDW55/57/59 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in professional equipment such as telecommunication and etc.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage BDW56 BDW58 BDW60 -45 -60 -100 VCER Collector-Emitter Voltage RBE= 1kΩ BDW56 BDW58 BDW60 -45 -60 -100 VCEO Collector-Emitter Voltage BDW56 -45 BDW58 -60 BDW60 -80 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -1.5 ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 12.5 150 Tstg Storage Temperature Range -65~150 UNIT V V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient MAX 10 100 UNIT ℃/W ℃/W BDW56/58/60 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BDW56/58/60 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT BDW56 -45 VCEO(SUS) Collector-Emitter Sustaining Voltage BDW58 IC= -10mA ;IB=0 -60 V BDW60 -80 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A;

Overview

isc Silicon PNP Power Transistors.

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