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BDW73C - NPN Transistor

Download the BDW73C datasheet PDF. This datasheet also covers the BDW73 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BDW73-INCHANGE.pdf) that lists specifications for multiple related part numbers.

General Description

·Collector Current -IC= 8A ·High DC Current Gain-hFE= 750(Min.)@ IC= 3A ·Complement to Type BDW74/A/B/C/D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW73 45 VCBO Collector-Base Voltage BDW73A 60 BDW73B 80 V BDW73C 100 BDW73D 120 BDW73 45 BDW73A 60 VCEO Collector-Emitter Voltage BDW73B 80 V BDW73C 100 BDW73D 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IB Base Current-Continuous Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.3 A 2 W 80 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.56 ℃/W Rth j-c Thermal Resistance, Junction to Case 62.5 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDW73 V(BR)CEO Collector-Emitter Breakdown Voltage BDW73A BDW73B IC= 30mA;

IB=0 BDW73C BDW73D VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A;

IB= 12mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A;

Overview

isc Silicon NPN Darlington Power Transistor BDW73/A/B/C/D.