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BDW94CFP Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

General Description

·With TO-220F packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Complement to Type BDW93CFP ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AC-DC motor control ·Electronic ignition ·Alternator regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -15 A IB Base Current -0.2 A PC Collector Power Dissipation 33 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.8 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor BDW94CFP ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA, IB= 0 VCE(sat)1 Collector-Emitter Saturation Voltage IC=- 5A ,IB= -20mA VCE(sat)2 Collector-Emitter Saturation Voltage IC= -10A ,IB=- 100mA VBE(sat)1 Base-Emitter Saturation Voltage IC= -5A ,IB= -20mA VBE(sat)2 Base-Emitter Saturation Voltage IC= -10A ,IB=- 100mA ICBO Collector Cutoff Current VCB=-100V, IE= 0 ICEO Collector Cutoff Current VCE=- 100V, IB= 0 IEBO Emitter Cutoff Current VEB=- 5V;

IC= 0 hFE-1 DC Current Gain IC= -3A ;

VCE=- 3V hFE-2 DC Current Gain IC=- 5A ;

Overview

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor BDW94CFP.