BDX36 - NPN Transistor

Inchange Semiconductor

General Description

High Current Capability-IC= 5A(DC) DC Current Gain : hFE = 45-450(Min) @ IC= 0.5 A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High-current switching in po

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Datasheet Details

Part number	BDX36
Manufacturer	Inchange Semiconductor
File Size	207.42 KB
Description	NPN Transistor
Datasheet	BDX36 Datasheet

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isc Silicon NPN Power Transistor BDX36 DESCRIPTION ·High Current Capability-IC= 5A(DC) ·DC Current Gain— : hFE = 45-450(Min) @ IC= 0.5 A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High-current switching in power applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IBM Base Current-Peak Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC≤ 75℃ Ti Junction Temperature 2 A 1.