Collector-Emitter Sustaining Voltage-
: VCEO(sus)= 45V(Min)
High DC Current Gain
: hFE= 750(Min) @IC= 3A
Low Collector Saturation Voltage
: VCE(sat) = 2.0 V (Max) @ IC = 3.0 A
Complement to Type BDX54
Minimum Lot-to-Lot variations for robust device
performance and reliable o
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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(sus)= 45V(Min) ·High DC Current Gain
: hFE= 750(Min) @IC= 3A ·Low Collector Saturation Voltage
: VCE(sat) = 2.0 V (Max) @ IC = 3.0 A ·Complement to Type BDX54 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose amplifier and low-speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
45
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICP
Collector Current-Peak
12
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.
BDX53 Datasheet
