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BDX54F - PNP Transistor

General Description

Collector Current -IC= -8A High DC Current Gain- : hFE= 500(Min)@ IC= -2A Complement to Type BDX53F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in power linear and switching applications.

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isc Silicon PNP Darlington Power Transistor BDX54F DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain- : hFE= 500(Min)@ IC= -2A ·Complement to Type BDX53F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCER Collector-Emitter Voltage -160 VCEO Collector-Emitter Voltage -160 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 ICM Collector Current-Peak -12 IB Base Current-Continuous -0.