High DC Current Gain-
: hFE= 1000(Min)@ IC= 10A
Low Saturation Voltage
Complement to Type BDX66/A/B/C
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio output stages and general amplifier
and switching applicat
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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 1000(Min)@ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDX67
80
BDX67A
100
VCBO
Collector-Base Voltage
BDX67B
120
BDX67C
140
BDX67
60
BDX67A
80
VCEO
Collector-Emitter Voltage
BDX67B
100
BDX67C
120
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
16
ICM
Collector Current-Peak
20
IB
Base Current
250
PC
Collector Power Dissipation @ TC=25℃
150
TJ
Junction Temperature
200
Tstg
Storage Temperature Range
BDX67 Datasheet
