High DC Current Gain-
: hFE= 1000(Min)@ IC= 20A
Low Saturation Voltage
Complement to Type BDX68/A/B/C
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio output stages and general amplifier
and switching applica
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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 1000(Min)@ IC= 20A ·Low Saturation Voltage ·Complement to Type BDX68/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDX69
80
BDX69A
100
VCBO
Collector-Base Voltage
BDX69B
120
BDX69C
140
BDX69
60
BDX69A
80
VCEO
Collector-Emitter Voltage
BDX69B
100
BDX69C
120
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
25
ICM
Collector Current-Peak
40
IB
Base Current
500
PC
Collector Power Dissipation @ TC=25℃
150
TJ
Junction Temperature
200
Tstg
Storage Temperature Range
BDX69 Datasheet
