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BDX77 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) Complement to Type BDX78 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

of 15 to 15 W into a 4Ωor 8Ωload.

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·Complement to Type BDX78 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload.