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isc Silicon NPN Darlington Power Transistor
BDX83/A/B/C
DESCRIPTION ·High DC Current Gain-
: hFE= 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BDX83; 60V(Min)- BDX83A 80V(Min)- BDX83B; 100V(Min)- BDX83C
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDX83
45
BDX83A
60
VCBO
Collector-Base Voltage
BDX83B
80
BDX83C 100
BDX83
45
VCEO
Collector-Emitter Voltage
BDX83A
60
BDX83B
80
BDX83C 100
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
10
ICM
Collector Current-Peak
15
IB
Base Current
250
PC
Collector Power Dissipation @ TC=25
BDX83 Datasheet
