Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min.)
Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.6V(Max)@ IC = 2A
High Switching Speed
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for LF signal powe a
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isc Silicon NPN Power Transistor
BDY26
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min.) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for LF signal powe amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
180
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
6
A
IB
Base Current
3
A
PC
Collector Power Dissipation@TC=25℃ 87.
BDY26 Datasheet
