| Part number | BDY26 |
|---|---|
| Datasheet | BDY26-INCHANGE.pdf |
| File Size | 207.37 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF signal powe amplifier applications.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BDY26 | NPN SILICON TRANSISTORS | Comset Semiconductor |
 |
BDY26A | HIGH CURRENT NPN SILICON TRANSISTOR | Seme LAB |
|
BDY26B | HIGH CURRENT NPN SILICON TRANSISTOR | Seme LAB |
