Datasheet4U Logo Datasheet4U.com

BDY27 Datasheet - INCHANGE

NPN Transistor

BDY27 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) *Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A *High Switching Speed *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for LF signal powe a.

BDY27 Datasheet (207.28 KB)

Preview of BDY27 PDF

Datasheet Details

Part number:

BDY27

Manufacturer:

INCHANGE

File Size:

207.28 KB

Description:

Npn transistor.

📁 Related Datasheet

BDY20 Bipolar NPN Device (Seme LAB)

BDY20 Silicon NPN Power Transistor (Inchange Semiconductor)

BDY23 (BDY23 - BDY25)NPN SILICON TRANSISTORS (Comset Semiconductor)

BDY23 Bipolar NPN Device (Seme LAB)

BDY23 Silicon NPN Power Transistor (Inchange Semiconductor)

BDY23A Bipolar NPN Device (Seme LAB)

BDY23B Bipolar NPN Device (Seme LAB)

BDY23C Bipolar NPN Device (Seme LAB)

BDY24 (BDY23 - BDY25)NPN SILICON TRANSISTORS (Comset Semiconductor)

BDY24 Silicon NPN Power Transistor (Inchange Semiconductor)

TAGS

BDY27 NPN Transistor INCHANGE

Image Gallery

BDY27 Datasheet Preview Page 2

BDY27 Distributor