Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 250V(Min.)
Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.6V(Max)@ IC = 2A
High Switching Speed
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for LF signal powe a
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
BDY28
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 250V(Min.) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for LF signal powe amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
6
A
IB
Base Current
3
A
PC
Collector Power Dissipation@TC=25℃ 87.
BDY28 Datasheet
