Excellent Safe Operating Area
DC Current Gain-
: hFE=25-100@IC = 4A
Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.7V(Max)@ IC = 4A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in high power AF output s
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isc Silicon NPN Power Transistor
BDY39
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=25-100@IC = 4A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.7V(Max)@ IC = 4A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high power AF output stages and in
stabilized power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCER
Collector-Emitter Voltage
70
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
22.
BDY39 Datasheet
