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BDY49 Datasheet Preview

BDY49 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V (Min)
·Excellent Safe Operating Area
·High Current Capability
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high current, high speed, high power
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
100
V
6
V
30
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
TJ
Junction Temperature
8
A
150
W
150
Tstg
Storage Temperature Range
-55~150
HERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 0.7 /W
BDY49
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BDY49 Datasheet Preview

BDY49 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
BDY49
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat)-1 Collector-Emitter Saturation Voltage IC=10A; IB= 1A
1.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 2A
1.5
V
VBE(sat)-1 Base-Emitter Saturation Voltage
IC=10A; IB= 1A
1.5
V
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 20A; IB= 2A
2.5
V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
100
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6
V
hFE-1
DC Current Gain
IC=1A; VCE= 5V
60
200
hFE-2
DC Current Gain
IC=10A; VCE= 5V
30
hFE-3
DC Current Gain
IC=20A; VCE= 5V
10
ICBO
Collector Cutoff Current
VCB=100V ; IE= 0
100 uA
IEBO
Emitter Cutoff Current
VEB=6V; IC= 0
100 uA
fT
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V; ftest= 1.0MHz
3
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BDY49
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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BDY49 Datasheet PDF





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