Datasheet4U Logo Datasheet4U.com

BDY49 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) Excellent Safe Operating Area High Current Capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current, high speed

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BDY46 Bipolar NPN Device Seme LAB
BDY47 Bipolar NPN Device Seme LAB
BDY10 Silicon NPN Transistor Valvo
BDY11 Silicon NPN Transistor Valvo
BDY12 NPN Silicon Planar Trnasistors Siemens Semiconductor Group

Other Datasheets by Inchange Semiconductor

Part Number Description
BDY42 NPN Transistor
BDY43 NPN Transistor
BDY44 NPN Transistor
BDY45 NPN Transistor
BDY46 Silicon NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Excellent Safe Operating Area ·High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications.
Published: |