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BDY76 - NPN Transistor

General Description

Excellent Safe Operating Area High DC Current Gain- : hFE= 40~120@IC = 10A Low Saturation Voltage- : VCE(sat)= 1.4V(Max)@ IC = 10A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for linear amplifiers, series pass reg

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain- : hFE= 40~120@IC = 10A ·Low Saturation Voltage- : VCE(sat)= 1.4V(Max)@ IC = 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications.