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BDY90 Datasheet Preview

BDY90 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·High DC Current Gain-
: hFE= 30-120@IC= 5A
·Excellent Safe Operating Area
·High Current Capability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in switching-control amplifiers, power
gates,switching regulators, converters, and inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
120
V
VCEO Collector-Emitter Voltage
100
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC25
TJ
Junction Temperature
2
A
60
W
175
Tstg
Storage Temperature Range
-65~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
2.5
/W
BDY90
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BDY90 Datasheet Preview

BDY90 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
BDY90
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
VCE(sat)-1
VCE(sat)-2
Collector-Emitter
Voltage
Collector-Emitter
Voltage
Collector-Emitter
Voltage
Sustaining IC= 30mA ;IB= 0
Saturation IC= 5A; IB= 0.5A
Saturation IC= 10A; IB= 1A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
MIN TYP MAX UNIT
120
V
0.5
V
1.5
V
1.2
V
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 10A; IB= 1A
1.5
V
ICBO
Collector Cutoff Current
VCB=120V; IE=0
1.0 mA
IEBO
Emitter Cutoff current
VEB=6V; IC=0
1.0 mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 2V
30
hFE-2
DC Current Gain
IC= 5A ; VCE= 5V
30
120
hFE-3
DC Current Gain
IC= 10A ; VCE= 5V
20
fT
Current-Gain—Bandwidth Product IC= 0.5 A;VCE= 5V;ftest = 5MHz
70
MHz
Switching Times
ton
Turn-On Time
0.35 μs
tstg
Storage Time
IC= 5A; IB1= -IB2= 0.5A,
VCC=30V
1.3 μs
tf
Fall Time
0.2 μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number BDY90
Description NPN Transistor
Maker INCHANGE
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