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BF458 - NPN Transistor

Download the BF458 datasheet PDF. This datasheet also covers the BF457 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Collector-Emitter Breakdown Voltage- : VCEO(BR) = 160V(Min)- BF457 250V(Min)- BF458 300V(Min)- BF459 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Intended for video output stages in colour and black And white TV receivers ABSOLUTE M

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BF457-INCHANGE.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BF458 NPN high-voltage transistors NXP
BF458 HIGH VOLTAGE VIDEO AMPLIFIERS STMicroelectronics
BF458 NPN SILICON RF TRANSISTORS Siemens Semiconductor Group
BF458 Silicon NPN Transistor Toshiba
BF450 PNP medium frequency transistor NXP

Other Datasheets by Inchange Semiconductor

Part Number Description
BF457 NPN Transistor
BF459 NPN Transistor
BF469 NPN Transistor
BF470 PNP Transistor
BF471 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BF457/458/459 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO(BR) = 160V(Min)- BF457 250V(Min)- BF458 300V(Min)- BF459 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Intended for video output stages in colour and black And white TV receivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BF457 160 V VCBO Collector-Base Voltage BF458 250 BF459 300 BF457 160 V VCEO Collector-Emitter Voltage BF458 250 BF459 300 VEBO Emitter-Base Voltage 5 V ICM Collector Current-Peak 300 mA IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50 mA 1.
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