BT169DW
DESCRIPTION
- With SOT-223 packaging
- High surge capability
- Glass passivated junctions and center gate fire for greater parameter uniformity and stability
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM
Repetitive peak off-state voltage
VRRM
Repetitive peak off-state voltage
IT(AV)
Average on-state current
IT(RMS)
RMS on-state current
PG(AV)
Average gate power
ITSM
Non-repetitive peak on-state current
Tj
Operating junction temperature
Tstg
Storage temperature
400 400 0.63
1 0.1 8 -40~110 -40~150
UNIT
V V A A W A ℃
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
Repetitive peak off-state voltage VRRM=400V IRRM
Repetitive peak reverse voltage VRRM=400V;Tj=110℃
Repetitive peak reverse current VRRM=400V IDRM
Repetitive peak off-state current VDRM=400V;Tj=110℃...
