Datasheet4U Logo Datasheet4U.com

BU108 - NPN Transistor

General Description

High Voltage High Switching Speed Collector Current- IC = 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high voltage CRT scanning applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BU100 Silicon NPN Power Transistors Inchange Semiconductor
BU1006 Enhanced PowerBridge Rectifiers Vishay Siliconix
BU1006-E3 Bridge Rectifiers Vishay
BU1006-M3 Bridge Rectifiers Vishay
BU1006A Enhanced PowerBridge Rectifiers Vishay Siliconix

Other Datasheets by Inchange Semiconductor

Part Number Description
BU102 NPN Transistor
BU104D NPN Transistor
BU109 NPN Transistor
BU110 NPN Transistor
BU114 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Switching Speed ·Collector Current- IC = 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage CRT scanning applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCEO Collector-Emitter Voltage 750 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous 3.5 A IE Emitter Current-Continuous PC Collector Power Dissipation @VCE≤100V,TC≤95℃ TJ Junction Temperature 8.5 A 12.5 W 115 ℃ Tstg Storage Temperature -65~115 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.