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BU133 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min.) Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 2A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in color TV receiver’s chopper supply.

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isc Silicon NPN Power Transistor BU133 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min.) ·Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in color TV receiver’s chopper supply. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 750 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC= 50℃ TJ Junction Temperature 3 A 30 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.