Datasheet Details
| Part number | BU2727A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.85 KB |
| Description | NPN Transistor |
| Download | BU2727A Download (PDF) |
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| Part number | BU2727A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.85 KB |
| Description | NPN Transistor |
| Download | BU2727A Download (PDF) |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 825V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1700 V VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous 825 V 8 V 12 A ICM Collector Current-Peak IB Base Current- Continuous IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 12 A 25 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU2727A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
isc Silicon NPN Power Transistor BU2727A.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BU2727A | Silicon Diffused Power Transistor | NXP |
|
BU2727AF | Silicon Diffused Power Transistor | NXP |
 |
BU2727AF | SILICON POWER TRANSISTOR | SavantIC |
|
BU2727AW | Silicon Diffused Power Transistor | NXP |
|
BU2727AW | SILICON POWER TRANSISTOR | SavantIC |
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