BU415B - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Sustaining Voltag- : VCEO(SUS)= 400V(Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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BU415B npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	BU415B
Manufacturer	Inchange Semiconductor
File Size	200.07 KB
Description	NPN Transistor
Datasheet	BU415B Datasheet

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Other Datasheets by Inchange Semiconductor

Part Number	Description
BU415	NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltag- : VCEO(SUS)= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal output and high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak Repetitive 15 A PC Collector Power Dissipation @ TC=25℃ 120 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BU415B isc website：www.iscsemi.