Datasheet Details
| Part number | BU4508AX |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.37 KB |
| Description | NPN Transistor |
| Datasheet |
 BU4508AX Datasheet
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| Part number | BU4508AX |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.37 KB |
| Description | NPN Transistor |
| Datasheet |
BU4508AX Datasheet
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High-voltage high-speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of CTV receivers and p.c monitors.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak IB Base Current- Continuous 15 A 4 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ 6 A 45 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.8 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU4508AX ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;
isc Silicon NPN Power Transistor BU4508AX.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BU4508AX | Silicon Diffused Power Transistor | NXP |
 |
BU4508AF | Silicon NPN Power Transistor | Inchange Semiconductor |
|
BU4508AF | Silicon Diffused Power Transistor | NXP |
|
BU4508AZ | Silicon Diffused Power Transistor | NXP |
|
BU4508DF | Silicon Diffused Power Transistor | NXP |
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