Datasheet Details
| Part number | BU4522AX |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.21 KB |
| Description | NPN Transistor |
| Datasheet | BU4522AX-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor BU4522AX.
| Part number | BU4522AX |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.21 KB |
| Description | NPN Transistor |
| Datasheet | BU4522AX-INCHANGE.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and PC monitors.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 10 A ICM Collector Current-Peak IB Base Current- Continuous IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 25 A 6 A 9 A 45 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.8 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BU4522AX | Silicon Diffused Power Transistor | NXP |
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BU4522AF | Silicon Diffused Power Transistor | NXP |
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BU4522AF | Silicon NPN Power Transistor | Inchange Semiconductor |
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BU4522DF | Silicon Diffused Power Transistor | NXP |
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BU4522DX | Silicon Diffused Power Transistor | NXP |
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| BU407F | NPN Transistor |