isc Silicon NPN Power Transistor
BU505F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
700
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.9A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 2A; IB= 0.9A
VCE= VCESmax; VBE= 0
VCE= VCESmax; VBE= 0;TJ= 125℃
VEB= 5V; IC= 0
1.3
V
0.15
1.0
mA
1.0 mA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
6
30
hFE-2
DC Current Gain
IC= 2A; VCE= 5V
2.22
fT
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V
7
MHz
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
65
pF
Switching Times; Resistive load
tstg
Storage Time
tf
Fall Time
IC= 2A , IB(end)= 0.9A;Vdr= -4V
LB= 25μH
9.5
μs
0.85
μs
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ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
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