900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

BU505F Datasheet Preview

BU505F Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V(Min.)
·High Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in horizontal deflection circuits of color TV
receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage-VBE=0
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2.5
A
ICM
Collector Current-Peak
4
A
IB
Base Current-Continuous
2
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
4
A
20
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
3.85 /W
BU505F
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BU505F Datasheet Preview

BU505F Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
BU505F
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
700
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.9A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 2A; IB= 0.9A
VCE= VCESmax; VBE= 0
VCE= VCESmax; VBE= 0;TJ= 125
VEB= 5V; IC= 0
1.3
V
0.15
1.0
mA
1.0 mA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
6
30
hFE-2
DC Current Gain
IC= 2A; VCE= 5V
2.22
fT
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V
7
MHz
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
65
pF
Switching Times; Resistive load
tstg
Storage Time
tf
Fall Time
IC= 2A , IB(end)= 0.9A;Vdr= -4V
LB= 25μH
9.5
μs
0.85
μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BU505F
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
PDF Download

BU505F Datasheet PDF





Similar Datasheet

1 BU505 NPN Transistor
INCHANGE
2 BU505 Silicon diffused power transistors
NXP
3 BU505 HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR
ST Microelectronics
4 BU505 SILICON POWER TRANSISTOR
SavantIC
5 BU505D NPN Transistor
INCHANGE
6 BU505D Silicon diffused power transistors
NXP
7 BU505DF NPN Transistor
INCHANGE
8 BU505DF Silicon diffused power transistors
NXP
9 BU505DF SILICON POWER TRANSISTOR
SavantIC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy