Datasheet Details
| Part number | BU508AT |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.12 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BU508AT-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor BU508AT.
| Part number | BU508AT |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.12 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BU508AT-InchangeSemiconductor.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Power Dissipation- : PD= 100W@TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current- Continuous 4 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.2 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU508AT ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BU508AT | NPN SILICON PLANAR POWER TRANSISTOR | CDIL |
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BU508A | NPN Transistor | INCHANGE |
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BU508A | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS | ST Microelectronics |
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BU508A | SILICON POWER TRANSISTOR | SavantIC |
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BU508A | NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR | CDIL |
| Part Number | Description |
|---|---|
| BU508A-2 | Silicon NPN Power Transistor |
| BU508A-M | Silicon NPN Power Transistor |
| BU522 | Silicon Darlington NPN Power Transistor |
| BU522A | Silicon Darlington NPN Power Transistor |