Continental Device India BU508AT
NPN SILICON PLANAR POWER TRANSISTOR
| Part No. | BU508AT |
|---|---|
| Datasheet | BU508AT Download |
| Manufacturer |  Continental Device India |
| Description | NPN SILICON PLANAR POWER TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage Collector Emitter Voltage Collector Current (DC) Collector Current (Peak) Base Current (DC) Base Current (Peak) Reverse Base Current (DC or average over any 20 ms period) Reverse Base Current (Peak Value) Power Dissipation upto Tc=25ºC Operating and Storage Junction Temperature Range *Turn off Current SYMBOL VCES VCEO IC ICM IB IBM -IB(AV) *-IBM Ptot Tj, Tstg VALUE 1500 700 8 15 4 6 100 5 60 - 65 to +150 UNIT V V A A A A mA A W ºCELECTRICAL CHARACTERISTICS
(Tc=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION **ICES VCE=VCES max, VBE=0 Collector Cut off Current Tj=125ºC VCE=VCES max, VBE=0 VEB=6V, IC=0 IC=100mA, IB=0, L=25mH IC=4.5A, VCE=5V IC=4.5A, IB=2A IC=4.5A, IB=2A IC=0.1A, VCE=5V, f=5MHz IE=ie=0, VCB=10V, f=1MHz MIN TYP MAX 1.0 UNIT mA Emitter Cut off Current Collector Emitter Sustaining Voltage DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Transition Frequency...
