BU508AT
BU508AT is NPN SILICON PLANAR POWER TRANSISTOR manufactured by Continental Device India.
DESCRIPTION
Collector Emitter Voltage Collector Emitter Voltage Collector Current (DC) Collector Current (Peak) Base Current (DC) Base Current (Peak) Reverse Base Current (DC or average over any 20 ms period) Reverse Base Current (Peak Value) Power Dissipation upto Tc=25ºC Operating and Storage Junction Temperature Range
- Turn off Current SYMBOL VCES VCEO IC ICM IB IBM -IB(AV)
- -IBM Ptot Tj, Tstg http://..net/
VALUE 1500 700 8 15 4 6 100 5 60
- 65 to +150
UNIT V V A A A A m A A W ºC
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION
SYMBOL TEST CONDITION
- - ICES VCE=VCES max, VBE=0 Collector Cut off Current Tj=125ºC VCE=VCES max, VBE=0 VEB=6V, IC=0 IC=100m A, IB=0, L=25m H IC=4.5A, VCE=5V IC=4.5A, IB=2A IC=4.5A, IB=2A IC=0.1A, VCE=5V, f=5MHz IE=ie=0, VCB=10V, f=1MHz
MAX 1.0
UNIT m A
Emitter Cut off Current Collector Emitter Sustaining Voltage DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Transition Frequency Collector Capacitance
IEBO
- VCEO(sus)
- h FE
- VCE(sat)
- VBE(sat) f T CC
2.0 10 700 2.25 1.0 1.3 7 125 m A m A V V V MHz p F
- - Measured with half-sinewave Voltage (curve tracer)
- Pulse Test: Pulse Width=5ms, Duty Cycle<10%
Continental Device India Limited
Data Sheet
Page 1 of 3 datasheet pdf
- http://..net/
BU508AT TO-220 Plastic Package TO-220 Plastic Package
B H F C E DIM MIN MAX 14.42 16.51 A 9.63 10.67 B C 3.56 4.83
- 0.90 D 1.15 E 1.40 3.75 3.88 F G 2.29 2.79 2.54 3.43 H
- 0.56 J 12.70 14.73 K 2.80 4.07 L M 2.03 2.92
- 31.24 N O 7 DEG All diminsions in mm.
A N L 1 2 3 D G K 0 J M 0
Pin Configuration 1. Base 2. Collector 3. Emitter 4. Collector TO-220 Tube Packing http://..net/
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