BU508DX - NPN Transistor

Inchange Semiconductor

General Description

High Voltage-VCES= 1500V(Min.) Collector Current- IC = 8.0A Built-in Integrated Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in large screen color deflection circuits .

📥 Download Datasheet

BU508DX npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	BU508DX
Manufacturer	Inchange Semiconductor
File Size	213.04 KB
Description	NPN Transistor
Datasheet	BU508DX Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BU508DX	Silicon Diffused Power Transistor	NXP
BU508DX	SILICON POWER TRANSISTOR	SavantIC
BU508D	Horizontal Deflection Transistors	Multicomp
BU508D	SILICON POWER TRANSISTOR	SavantIC
BU508D	Silicon Diffused Power Transistor	Philips

Other Datasheets by Inchange Semiconductor

Part Number	Description
BU508DFI	NPN Transistor
BU508DR	NPN Transistor
BU508DW	NPN Transistor
BU508	NPN Transistor
BU508A	NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage-VCES= 1500V(Min.) ·Collector Current- IC = 8.0A ·Built-in Integrated Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8.