BU526
Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min.) High Speed Switching High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: BU526
- Description: NPN Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 201.88 KB
Datasheets by Manufacturer
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