BU526 Datasheet - INCHANGE

NPN Transistor

BU526 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min.) *High Speed Switching *High Power Dissipation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for use in switching mode power supply. ABSOLUTE MAXIMUM RATINGS.

BU526 Datasheet (201.88 KB)

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BU526

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INCHANGE

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201.88 KB

Description:

Npn transistor.

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BU526 NPN Transistor INCHANGE

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BU526 General Description

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