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BU526 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min.) High Speed Switching High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in switching mode power supply.

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isc Silicon NPN Power Transistor BU526 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min.) ·High Speed Switching ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching mode power supply.