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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for automotive ignition applications and inverter
circuits for motor control.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage VBE= 0
400
V
VCEO
Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
10
A
ICM
Collector Current-peak
15
A
IB
Base Current
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
5
A
120
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.25 ℃/W
BU920
isc website：www.
BU920 Datasheet
