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BU926 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) Low Saturation Voltage : VCE(sat)= 1.5V (Max)@IC= 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage , high-speed , power switching in i

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isc Silicon NPN Power Transistor BU926 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·Low Saturation Voltage : VCE(sat)= 1.5V (Max)@IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage , high-speed , power switching in inductive circuit.