Datasheet Details
| Part number | BUK444-800A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 221.90 KB |
| Description | N-Channel MOSFET |
| Download | BUK444-800A Download (PDF) |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | BUK444-800A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 221.90 KB |
| Description | N-Channel MOSFET |
| Download | BUK444-800A Download (PDF) |
|
|
|
·Drain Source Voltage- : VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage Drain BUK444-800A ID Current-continuous @ TC=25℃ BUK444-800B Ptot Total Dissipation@TC=25℃ Tj Max.
Operating Junction Temperature Tstg Storage Temperature Range VALUE UNIT 800 V ±30 V 1.4 A 1.2 30 W 150 ℃ 150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.17 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 55 ℃/W BUK444-800A/B isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor BUK444-800A/B ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
ID= 0.25mA 800 V VGS(th) Gate Threshold Voltage VDS=VGS;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BUK444-800A | PowerMOS transistor | NXP |
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BUK444-800B | PowerMOS transistor | NXP |
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BUK444-800B | N-Channel MOSFET Transistor | Inchange Semiconductor |
| Part Number | Description |
|---|---|
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